Optically controlled memory element based on a metal-nitride-oxide-semiconductor structure with a gallium arsenide substrate

An experimental study was made of switching in a metal-nitride-oxide-semiconductor (MNOS) structure with insulator layers formed by plasmochemical deposition on gallium arsenide substrates. Such switching was found to be of threshold nature. The switching by negative voltage pulses occurred only during illumination. The light pulse energy needed for switching was 2×10–6 J/mm2. The charge stored in the traps in the insulator decayed by less than 25% in a period of 20 h after switching.