Contactless derivation of inner fields in gate-oxide layers: SiO2 on SiC

2015 
Probing depth electrostatic potential profiles at sub-nm resolution is a major characterization challenge. An answer is frequently proposed by chemically resolved electrical measurements (CREM); yet, CREM is limited in extracting the profile details within compositionally uniform domains. Here, we show that this principal limitation can be overcome and the CREM resolution be improved significantly. Applied to nanometric SiO2 layers on SiC, hidden impurity concentration profiles are revealed and the inner fields, before and during dielectric collapse, are quantified. With this leap improvement in resolution and sensitivity, our advanced CREM analysis promises diverse applications in device contact-free electrical studies.
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