A model for the oxidation‐enhanced diffusion of boron in extrinsic silicon

In this communication the authors propose a simple method for the estimation of the fractional interstitialcy component fI of boron that is based on the interpretation of oxidation‐enhanced diffusion data in extrinsic conditions. The model developed explains satisfactorily the experimental results when the value of fI is 0.25. This result indicates an important contribution of vacancies to boron diffusion in silicon.