Implant damage-free image sensor and related method

It is disclosed an image sensor. The image sensor comprises an epitaxial layer, a plurality of connector structures, and an interconnection structure. Wherein the plurality of plug structures in the epitaxial layer is formed, and each has connector structure doped side walls, the epitaxial layer and doped side walls form a plurality of photodiodes, the plurality of plug structures used to separate adjacent photodiodes, and the epitaxial layer, and the doped side walls are coupled via the connector structures with the interconnection structure. A related method of manufacturing the image sensor is also disclosed. The method comprises the steps of: providing a substrate having a doped epitaxial layer of the first conductivity type on a substrate doped epitaxial substrate layer of second conductivity type; Forming a plurality of isolation trenches in the epitaxial substrate layer doped the first conductivity type; Forming a doped region of second conductivity type along the side walls and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.