Characteristics of the irradiated Hamamatsu p-bulk silicon microstrip sensors
2008
Microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment. We evaluated the radiation hardness of the sensors fabricated by Hamamatsu Photonics through irradiation with 70-MeV protons up to the fluence of 5 × 10 15 1-MeV n eq /cm 2 and with 60 Co γs at a rate foreseen at the Super LHC. The strip isolation and punch-through properties are characterized in detail. Various strip isolation structures, p-stop, p-spray and both combined, are examined. The results are compared among commercially available MCZ and two types of FZ wafers.
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