Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

In this paper, a mismatch test structure in standard pair configuration using Kelvin method is introduced to better estimate the MOSFET local electrical fluctuations in sub-hundred nanometer technologies. Considering this test structure configuration, the impact of extern access connections on threshold voltage (Vt), gain factor (s) and drain current (I D ) mismatch extraction is investigated. To exhibit the impact of this parameter, the Vt and s are then extracted using extrapolation method. We demonstrate that the variability of access connections does not impact Vt mismatch whereas drain current matching is underestimated without Kelvin method.