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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for ter
Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for ter
1994
Kyushik Hong
P. Marsh
G. I. Ng
Dimitris Pavlidis
Chang-Hee Hong
Keywords:
Equivalent series resistance
Metalorganic vapour phase epitaxy
Schottky barrier
Analytical chemistry
Electronic engineering
Physics
Metal–semiconductor junction
Schottky diode
X-ray absorption spectroscopy
Terahertz radiation
Correction
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