Integrated circuit copper CMP composition and preparation method thereof

The invention relates to an integrated circuit copper CMP composition and a preparation method thereof, belongs to the technical fields of micro-electronics auxiliary materials and ultra-precision machining technology, and particularly relates to a polishing composition with a catalytic action. The composition comprises deionized water, combined abrasive particles containing catalysts, an oxidizing agent, a complexing agent, a corrosion inhibitor, an interface reaction assistant, a pH conditioning agent and a surface active agent, and the pH value of a polishing liquid composition is 2.0-5.5. The polishing abrasive particles are combined with the catalysts, so that the polishing abrasive particles have catalytic activity while reaching a mechanical grinding action, have the capacity of catalytic oxidation, and also double as a mechanical action and a chemical action; the polishing surface quality can be kept, and a copper chemical mechanical polishing composition realizing quick removal can be realized.