$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
2013
We present the first results of a planar Gunn diode made in In 0.53 Ga 0.47 As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3- μm active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
15
References
39
Citations
NaN
KQI