Ultrafast recovery times in implanted semiconductor saturable absorber mirrors at 1.5 /spl mu/m
2001
Summary form only given. Recovery times as short as /spl sim/1 ps are obtained with proton bombardment of InGaAs/InP-based saturable absorbers without significantly changing the non-saturable logs. Under high excitation, recovery is found to be limited by slower intraband relaxation rates.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
7
References
1
Citations
NaN
KQI