Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
2014
The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature interval ranging from 1675oC where 3C-SiC nucleated, to 1825oC where coverage of the substrate by 3C-SiC was nearly 100%. ...
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