Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys
2013
Abstract We report the behavior of nitrogen implanted into GaAs wafer upon annealing in the range of 500 °C to 1000 °C. The SIMS results show out-diffusion of nitrogen and the peaks in the distribution profiles of implanted nitrogen broadening. XPS measurements indicate that the N bonding configuration before annealing is contributed by N As , interstitial NN and the NAs complex. However, NAs complex disappears completely upon annealing at temperature higher than 700 °C. The spectra and quantitative analysis reveal that a saturation of N As happens as annealing temperature increases. Before the saturation, the substitional N As keeps rising, which leads to the elevation of n -type doping level in host. Whereas beyond the saturation, the excess thermal energy beyond saturation triggers the kick-out mechanism and induces dramatic increase in the amount of NN split interstitials, resulting in suppression of the nitrogen out-diffusion during annealing and pining of the Fermi level.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
25
References
8
Citations
NaN
KQI