Method for controlling threshold voltage in organic field-effect transistor

Provided is a method for suppressing a bias-stress effect in an organic field effect transistor, and simultaneously, controlling a threshold voltage to be a fixed value. A method for the acquired control of threshold voltage in the organic field-effect transistor includes a step of, at a first temperature at which the bias-stress effect occurs, applying a first-value gate voltage to the organic field-effect transistor, thereby causing the bias-stress effects, and a step of, while applying the first-value gate voltage, cooling the transistor to a temperature equal to or lower than a second temperature at which the bias-stress effect is frozen, thereby obtaining the organic field-effect transistor wherein the first value is set to be the threshold voltage at a temperature equal to or lower than the second temperature.