A novel high-frequency power MOSFET with quasi-SOI structure

A quasi-SOI power MOSFET has been fabricated by reversed silicon wafer direct bonding. In this power MOSFET, the buried oxide under the channel and source regions is removed and the channel region is directly connected to the source body contact electrode to reduce the base resistance of the parasitic n-p-n bipolar transistor. The quasi-SOI power MOSFET can suppress the parasitic bipolar action and shows lower product of the on-resistance and output capacitance than that of the vertical double diffused MOSFET.