R.F. Plasma CVD Of Diamond From Oxygen Containing Gases

ABSTRACT A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH /O in H 2' CO in H 2' and CH 4 /C01 in H plasmas. Depositions were made onmade of silicon and quartzwith surfaces modified by scratching, or coated with Diamond -Like Carbon (DLC), or left unmodified. The C atom to O atom ratio was systematically varied as well as the total concentration.Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:O ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.1.INTRODUCTIONPlasma assisted CVD of diamond has been the subject of recentstudy and investigation by a number of researchers throughout theworld. Many of these studies have focused on processes in which theplasma is generated by a means other than radio frequencies. One ofthe potential advantages of rf plasma systems is the relative ease of scale -up