A Lame Mode Resonator Based on Aluminum Nitride on Silicon Platform

A thin-film piezoelectric-on-silicon (TPoS) structured Lame mode resonator is experimentally reported in this work. The resonator is of a ring shape design and fabricated on the in-house AlN-on-SOI (silicon-on-insulator) platform. The thickness of the AlN layer and the device layer of the SOI is $1 \mu \mathrm{m}$ and $5 \mu \mathrm{m}$, respectively. Experimental results show that the Lame mode can be excited at 60.6MHz, with loaded Q factors of 3617 in air and 4708 in vacuum, demonstrating great potential for the reported resonator for applications such as timing and inertial measurement.