Enhancement in thermoelectric performance of Cu 3 SbSe 4 thin films by In(III) doping; synthesized by arrested precipitation technique

We have successfully synthesized p-type Cu3(Sb1−xInx)Se4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu3(Sb0.92In0.08)Se4 thin film at 300 K.