Growth of Bi2Te3 films and other phases of Bi-Te system by MOVPE

Abstract We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al 2 O 3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffractometry, SEM microscopy and Raman spectroscopy. To determine the elemental composition of the films, an energy dispersive spectrometer was used. Single-phase films of Bi 2 Te 3 , Bi 4 Te 5 , BiTe, Bi 10 Te 9 , Bi 4 Te 3 , Bi 3 Te 2 have been grown and growth parameter ranges for obtaining different phases were defined. It was found that under the same growth condition different phases of the Bi-Te system realize depending on the film's thickness. Thus, when growing of Bi 2 Te 3 films by MOCVD method the careful control of the phase composition is required.