Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

GaN samples 1–3 are cleaned by a 2:2:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%) to de-ionized water; hydrochloric acid (37%); or a 4:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%). The samples are activated by Cs/O after the same annealing process. X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows: sample 1 has the largest proportion of Ga, N, and O among the three samples, while its C content is the lowest. After activation the quantum efficiency curves show sample 1 has the best photocathode performance. We think the wet chemical cleaning method is a process which will mainly remove C contamination.