Preparation method of memristor

The present invention provides a preparation method of memristor, and relates to the memory manufacturing technology field. The problem of negative influence of semiconductor materials is effectively solved. The method comprises the steps: the step 1: collecting enough dried leaves; the step 2: obtaining ultrafine leaf powder for standby through adoption of collected leaves in the step 1 by employing the separation method; the step 3: dissolving the ultrafine leaf powder obtained in the step 2 into a ethyecellulose solution, and preparing a colloid; the step 4: taking fluorine doped stannic oxide transparent conducting glass FTO as a substrate, and employing the spin-coating method to perform spin coating of the colloid at one conductive surface of the substrate to form a film as a dielectric layer; the step 5: drying the substrate with the dielectric layer obtained in the step in a drying case with the temperature of 60 DEC G for more than 12 hours; the step 6: putting the substrate dried in the step 5 into a vacuum deposition device; and the step 7: taking the surface deposition metallic silver of the dielectric layer on the substrate as an upper electrode through the vacuum deposition method to obtain a memristor having a silver/leaf/FTO structure.