Improved light emitting diode chip with current barrier layer

The utility model provides an improved LED (light emitting diode) light emitting diode chip with a current barrier layer, which belongs to the technical field of semiconductors. The LED chip comprises a layered structure of an N-shaped semiconductor layer, a luminous layer and a P-shaped semiconductor layer, a transparent conducting layer, a P electrode formed on the transparent conducting layer and an N electrode formed on the N-shaped semiconductor layer. A groove with a smooth surface is formed right below the P electrode on the P-shaped semiconductor layer, and the current barrier layer is formed on the groove. The LED chip is right below the P electrode and has the function of current blocking. Meanwhile, the smooth surface of the groove also achieves the purpose of light reflection, thereby improving the luminous efficiency and prolonging the service life of the LED.