A UHV system for simultaneous evaporation and ion beam mixing and in situ RBS analysis

1986 
Abstract A UHV system for simultaneous evaporation and ion irradiation is described. Sandwich layers can be deposited by an e-gun evaporator, of which the atom flux is monitored by a quadrupole mass spectrometer. The surfaces are then homogeneously implanted by an electrostatically scanned and pulsed (97.466 Hz) ion beam. In situ RBS analysis is performed on the ion beam modified surfaces. A sample loading chamber provides high sample throughput while preserving ultra high vacuum conditions.
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