Temperature Cross-Over Effect of Carrier Avalanche Induced by Band-to-Band Tunneling in ULSI Devices

Experimental data and theoretical analysis of temperature cross-over effect in I-V characteristics of MOSFET and bipolar devices in a regime governed by band-to-band tunneling and avalanche generation are reported for the first time. The two mechanisms can be discriminated by their temperature dependence. The predictions of a proposed model are in excellent agreement with experiment using well-established parameters extracted from linear and saturation current regimes.