Ambipolar transistor device structure and method of forming the same

An ambipolar transistor device structure suitable for use in an integrated circuit is disclosed. An electron blocking layer or a hole blocking layer is interposed between a source/drain and an ambipolar active layer. Therefore, a unipolar device electric property may be extracted from the ambipolar active layer, which may be suitably applied to the design of a logic circuit. The manufacturing method of the disclosure is simple, only needing one patterning step, so as to effectively improve the performance of the ambipolar device.