Channel-etch thin film transistor

The present invention provides a channel-etched thin film transistor, the channel-etched thin film transistor having: a gate, which is located above the substrate; a gate insulating film which extends over the gate and the substrate; active layer including a channel region, the channel region is located above the gate insulating film; a source region and a drain region, which is located on the active layer; a source electrode connected to the source region, and the said source comprising: a source of the main portion in contact with said source region, and a source lead portion extending from the main portion of the source; and a drain connected to the drain region, and said drain electrode comprising: a main drain portion in contact with the drain region, and a drain lead portion extending from the main drain portion; wherein the source electrode and the drain electrode through the at least one interlayer separating the sidewall insulator of the active layer.