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InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD
InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD
2015
Yasushi Iyechika
Keywords:
Metalorganic vapour phase epitaxy
Analytical chemistry
Wafer
Materials science
Optoelectronics
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