Investigation of direct water photoelectrolysis process using III-N structures

2016 
GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H 2 production rate of 0.3–0.6 ml/cm 2 ×h was measured for n-GaN structure.
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