Effects of Quantum Barriers and Electron-Blocking Layer in Deep-Ultraviolet Light-Emitting Diodes

Impacts of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in details. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of active region. DUV LED structure with excellent output performance could be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, it could maintain excellent output performance even there is no EBL in its structure.