New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits

In this paper, the statistical characteristics of complex RTN (both DC and AC) are experimentally studied for the first time, rather than limited case-by-case studies. It is found that, over 50% of RTN-states predicted by conventional theory are lost in actual complex RTN statistics. Based on the mechanisms of non-negligible trap interactions, new models are proposed, which successfully interpret this state-loss behavior, as well as the different complex RTN characteristics in SiON and high-κ devices. The circuit-level study also indicates that, predicting circuit stability would have large errors if not taking into account the trap interactions and RTN state-loss. The results are helpful for the robust circuit design against RTN.