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Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride
Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride
1985
C. Chaussat
E. Bustarret
J.C. Bruyère
R. Groleau
Keywords:
Silicon nitride
Physics
Plasma-enhanced chemical vapor deposition
Nuclear magnetic resonance
Nitride
Hydrogen bond
Molecular physics
Optoelectronics
Condensed matter physics
Correction
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