Test results on heavily irradiated silicon detectors

The performance of silicon micro-strip detectors after heavy irradiationhave beeninvestigated using a muonbeam. Large-area sensors have been irradiated with neutrons and protons, read-out with fast shaping time electronics, and operated at low temperature. The paper presents a study of the charge collection efficiency, signal-to-noise ratio and hit reconstruction efficiency of these silicon devices.