Optical anisotropy and polarization fields for wurtzite films deposited on (112̄n)- and (101̄p)-orientated GaN substrates

Abstract We analyse the optical properties of GaN homoepitaxies grown on semipolar ( 11 2 n )- and ( 10 1 p )- orientated GaN substrates. We find the optical anisotropy of the GaN films to be strictly ruled by the angle between the growth plane and the 〈0001〉 direction of the crystal. This anisotropy offers a wide range of applications in the domain of surface emitting devices like VCELs and cavity polariton lasers based on GaN but also for similar structures relying on ZnO-related materials.