Transverse electric field-induced “memory” effect in O-TaS3

Abstract An unique “memory” effect of O-TaS 3 induced by a transverse field was observed for the first time. Using a technique developed by us, we were able to monitor the resistance change of the sample along conducting chains when a separate electric field slowly swept in the transverse direction. A sweeping field always brings some instability to the sample if the last sweep is in the opposite direction. But the sample's resistance keeps no change when the sweeping signal follows the same direction with the last one. The phenomenon seems having nothing to do with the motion of CDW.