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IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's
IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's
1987
S.F. Anderson
W. J. Schaff
P.J. Tasker
M.C. Foisy
G.W. Wang
L. F. Eastman
Keywords:
Gallium arsenide
Doping
Electronic engineering
Indium gallium arsenide
Electron
Saturation (chemistry)
Radio frequency
Physics
ingaas gaas
Correction
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