Er doped As 2 S 3 photoresist for 3-D direct laser fabrication of 3-D nanostructures
2008
We present a novel high-index-of-refraction (2.45) photoresist material based on erbium doped arsenic trisulfide. It shows room temperature photoluminescence at 1.5 microns wavelength, and can directly be used for direct laser writing.
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