Investigation on the electrical properties of amorphous IZALO thin-film transistors

Indium-Zinc-Aluminum-Lithium Oxide (IZALO) films and thin-film transistors (TFTs) were fabricated by radio frequency magnetron sputtering in this paper. X-ray diffraction test data show that IZALO films annealed at 325 ℃ in air atmosphere are amorphous. IZALO TFTs have excellent electrical properties with saturation mobility (µsat) of 28.2 cm2/V s, on/off current ratio (Ion/Ioff) of 1 × 109, off-state current (Ioff) of 1 × 10−12A, subthreshold swing (SS) of 0.51 V/dec, and threshold voltage (VTH) of 1.4V, respectively. The VTH shifts of IZALO TFTs under positive bias and negative bias were investigated.