Growth of crystalline CdS film on (100) InP by chemical bath deposition
1998
Chemical bath deposition technique has been employed to grow crystalline CdS on (100) InP substrate. X-ray diffraction showed good crystallinity of the films. The LO phonon Raman spectra show that annealing the sample at 500 °C improves the crystallinity substantially. The band edge photoluminescence was observed at room temperature with FWHM of ∼ 35nm.
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