Growth of crystalline CdS film on (100) InP by chemical bath deposition

1998 
Chemical bath deposition technique has been employed to grow crystalline CdS on (100) InP substrate. X-ray diffraction showed good crystallinity of the films. The LO phonon Raman spectra show that annealing the sample at 500 °C improves the crystallinity substantially. The band edge photoluminescence was observed at room temperature with FWHM of ∼ 35nm.
    • Correction
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []