Spin filter type magnetic tunnel junction using EuO ferromagnetic barrier

The purpose of this study is to prepare high quality spin filter type MTJ (SFMTJ) and investigate the possibilities of TMR and spintronics devices. Europium monoxide (EuO), a ferromagnetic semiconductor, is considered as a good barrier material for a trial study of SFMTJ. The magnetic properties of the EuO nanolayers is, first, investigated to employ them as ferromagnetic barriers. Observed magnetization saturation and coercivity confirm the ferromagnetic properties of the material and indicate compound formation at the interfaces.