High-quality synthetic 2D transition metal dichalcogenide semiconductors

We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS 2 , MoSe 2 , WSe 2 using chemical vapor deposition. The growth of MoS 2 on sapphire occurs epitaxially with the crystalline orientation of the MoS 2 film closely matching that of the sapphire substrate, resulting in a high-quality continuous film. The use of H 2 S results in more control over growth morphologies. WSe 2 and MoSe 2 have also been successfully grown using solid-state precursors. Room-temperature mobilities of all these materials exceed 10 cm 2 V −1 s −1 . In contrast to MoS 2 , WSe 2 and MoSe 2 show ambipolar behavior.