GaInP/GaAs Schottky diodes grown by atomic layer epitaxy and their application to MESFETs

Atomic layer epitaxy (ALE) was used to grow GaInP/GaAs MESFET structures, where control of the thickness of the GaInP layer is critical. GaInP/GaAs Schottky diodes showed higher breakdown voltages than GaAs Schottky diodes. MESFETs with GaInP/GaAs Schottky gates showed a good saturation and pinch-off behaviour of the drain-source current.