Features of oxide layer formation in high-aspect slot structures by means of MOCVD

Abstract Processes were studied concerning the deposition of Hf and Mg oxide layers in the slot structures with the aspect ratio values from 30 to 500 by means of a pulsed MOCVD technique with a discrete components dosing. For assembling the slot structures, different combinations of materials have been used such as Si/Si, Si/glass, glass/chromium patterned glass, and Si/chromium patterned glass. The layers were characterized by means of XRD, XPS, and SEM methods. The thickness profiles of deposited films were measured using a high spatial resolution laser ellipsometry. It has been demonstrated that the radial distribution profiles of the thickness are determined by the process temperature, the aspect ratio value and the type of precursor. In contrast to HfO 2 the layers of MgO with decreasing process temperature demonstrate change in the shape of layer profile distribution from a bowl-like shape to a dome-like one, with an increase of the film thickness at the center of the substrate. An image transfer process in the slot structure wherein one of the glass substrates is chromium-patterned has been studied within a wide range of experimental parameters. In order to describe these effects there has been a hybrid model proposed involving a combination of molecular dynamics and Monte Carlo methods. All the results obtained are discussed in detail.