The Enhancement of Thermoelectric Power and Scattering of Carriers in Bi2−xSnxTe3 Single Crystals

Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi 2−x Sn x Te 3 (0 2 Te 3 lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30–150 K for x≤0,0075. The activation type behaviour of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.