Coherency of the interphase boundary and elastic strain in the epitaxial system Ge/GaAs
1983
Examination of elastic strain and dislocation morphology in films and substrates of the Ge/GaAs heterosystem shows no misfit disloaction formation in systems with films thinner than 5 μm that is thirty times greater than Van der Merwe's critical thickness value. Strain in the substrate near an interface exceeds significantly that one expected from the elasticity theory; strain jump on the interface exceeds the mismatch of Ge and GaAs lattice parameters.
[Russian Text Ignored].
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
12
References
5
Citations
NaN
KQI