A semiconductor device with improved commutation

A semiconductor device having a a front side and an oppositely provided to the front rear-containing semiconductor body (20), wherein the active in the region of the front zones (1, 2) are arranged and the back is covered with an electrode (3), and in which in the range the back at a distance from this highly doped regions (6) are provided, characterized in that in the back with non-doped material (7, 8) filled trenches (5) are introduced at the bottom of the highly doped regions (6) are located, and that the space between the trenches (5) is lightly doped.