Spectroscopic studies of annealed aGe: probing an “ideal” random system
1985
Abstract We report on the electronic and structural characterization of an “ideal” amorphous semiconductor — that is elemental germanium in its lowest free energy disordered state. EXAFS measurements indicate a spread in the tetrahedral bond angle of 7° while XANES results indicate two features in the conduction band density of states associated with ordering.
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