Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model

This paper presents the superior switching performance of the in-situ Oxide-GaN interlayer FET (OG-FET) obtained by modeling a 1.4 kV/2.2 mΩ□cm 2 device fabricated by the authors [1]. Based on the parameters extracted from fabricated devices, an accurate 2D physics-based device model was developed. Using the device-circuit-integrated model built in Silvaco's MixedMode platform [2], we evaluated the switching performance of the OG-FET in 1) a double-pulse switch circuit, and 2) in a 200 V : 800 V boost converter as well. The OG-FET showed a remarkably low device figure-of-merit (Ron·Qgd) of 1275 mΩ□nC. Our results indicate that our recently fabricated large area GaN OG-FET has the potential of attaining higher efficiencies and also enabling MHz range conversions.