Research Progress on Growth Rate Controlling of Atomic Layer Deposition

Based on the self-limiting nature of sequential surface chemical reaction, atomic layer deposition (ALD) technique could grow films layer by layer. ALD has advantages of low growth temperature, precise thickness con- trollability, good conformity and uniformity. Therefore, it becomes a primary method for preparing thin films. As a key indicator of ALD technique, the growth rate of film plays an important role not only on the film quality and density, but also on the integrated circuit production efficiency. This paper reviews the recent research results of the ALD growth mechanism and rate, and the factors that affect the growth rate. Finally, this paper provides a summary