An ultra-wide-band 3.1–10.6 GHz LNA design in 0.18 μm SiGe BiCMOS

Abstract A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3–11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.