AC-dielectrophoretic force assisted fabrication of conducting quantum dot aggregates in the electrical breakdown-induced CNT nanogap

In this paper, we fabricated quantum dot (QD) aggregates at desired locations using dielectrophoretic (DEP) forces induced in the carbon nanotube (CNT) nanogap created by Joule heating-induced electrical breakdown. Nanogaps with a size of at least 20–30 nm can be effectively fabricated in the ambient condition, and fabrication yield can be monitored through in-situ electrical signal without post morphological analysis. The geometry of CNT electrodes with high aspect ratio as well as the gap size of the electrodes to a few tens of nanometers scale enabled the derivation of sufficiently high DEP forces that facilitate the trapping of QD in the CNT nanogap. Above all, we were able to fabricate a conducting crack-free QD aggregates by exchanging the ligands on the surface of the QDs in the presence of a DEP force and this approach showed the possibility of being applied as a QD based optoelectronic devices.