Photon energy dependence of the laser-induced emission yield of Si atoms from the Si(100) surface

We have carried out measurements of the temperature dependence of the emission yield of Si atoms from the Si(100) surfaces induced by nanosecond laser pulses of several photon energies. The yield is plotted as a function of , where is the photon energy and is the band-gap energy at temperature T where the yield is measured. We find that the Si emission yield is within the noise level for E = 0.9 - 1.15 eV (region I), increases to a saturation level for E = 1.15 - 1.42 eV (region II) and increases further for E = 1.42 - 2.15 eV (region III). The results are compared with those for GaP, GaAs and InP.